Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces
نویسندگان
چکیده
We present a temperature-dependence photoluminescence of (GaAs)5/(AlAs)5 superlattice grown on (311)A-oriented semi-insulating substrate by molecular beam epitaxy. The temperature dependence reveals an anomalous decrease of the PL width, which is explained in terms of phonon-assisted thermal activation of localized excitons. q 2004 Elsevier Ltd. All rights reserved. PACS: 23.23. þ x; 56.65.Dy
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ورودعنوان ژورنال:
- Microelectronics Journal
دوره 35 شماره
صفحات -
تاریخ انتشار 2004